Near room-temperature multiferroic materials with tunable ferromagnetic and electrical properties

Room Temperature Ferromagnetic Mn:Ge(001)

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS)...

Room-temperature ferroelectric polarization in multiferroic BiMnO3

Single-phase multiferroic BiMnO3 ceramic was synthesized via high-pressure and high-temperature solid-state reaction. Microstructure modification accompanied by emergence of superlattice due to electron-beam irradiation was observed wherein by means of electron diffraction (ED) combined with high-resolution transmission electron microscopy (HRTEM). It was clearly evidenced that the well-establi...

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

Sr(Ti1-xFex)O3-δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO₃ buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1-xFex)O3-δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the fe...

Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature.

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. In this work, we demonstrate the first observation of electrical control of antiferromagnetic domain structure in a single-phase multiferroic material at room temperature. High-resolution images of both antiferromagnetic and ferroelectric doma...

Supporting Information for adma200500737 Magnetocapacitance and Magnetoresistance Near Room Temperature in a Ferromagnetic Semiconductor: La2NiMnO6